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| AP9452G Advanced Power Electronics Corp. Lower gate charge Capable of 2.5V gate drive Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50m 4A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D S SOT-89 D G Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V3 Continuous Drain Current, VGS @ 4.5V3 Pulsed Drain Current 1 Rating 20 16 4 2.5 12 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 100 Unit /W Data and specifications subject to change without notice 201224031 AP9452G Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 20 0.7 - Typ. 0.03 10 6 1 2 8 9 13 3 360 80 65 Max. Units 38 50 80 1.5 1 25 100 10 570 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A VGS=4.5V, ID=4A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance 2 VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= 16V ID=4A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/s Min. - Typ. 18 10 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mount on FR4 board, t < 10s. AP9452G 50 40 T A =25 C 40 o T A =150 o C 4.5V ID , Drain Current (A) 30 4.5V ID , Drain Current (A) 30 3.5V 20 3.5V 20 10 2.5V V GS =1.5V 10 2.5V V GS =1.5V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 65 1.8 ID=4A 55 I D =4A 1.6 T A =25 o C Normalized RDS(ON) 1.4 V GS =4.5V RDS(ON) (m ) 45 1.2 1.0 35 0.8 25 0.6 1 3 5 7 9 11 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 100 10 0.95 VGS(th) (V) T j =150 o C IS (A) 1 T j =25 o C 0.7 0.1 0.45 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 0 50 100 150 V SD , Source -to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature |
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